曾敏，研究员，硕士生导师。
Email: zengmin@scnu.edu.cn
通讯地址(Mail Address): 广州大学城华南师范大学华南先进光电子研究院理五栋512室 510006
Rm 512, Building 5, South China Normal University at Guangzhou Higher Educational Mega Center, Guangzhou 510006, China
简介：
2010年毕业于香港理工大学应用物理系，获得理学博士学位。2002-2004年，在南京大学物理系刘俊明课题组从事硕士研究工作；2015-2016年，美国乔治梅森大学电机工程学院访问研究员；2010年12月-至今，在华南师范大学华南先进光电子研究院工作；2016年晋升为研究员。目前在ACS Nano、NPJ Quantum Mater、Appl. Phys. Lett.等国际重要学术期刊上发表SCI学术论文90多篇；申请国家发明专利多项，主持包括国家自然科学基金(面上、青年)、国家重点项目子课题、国家重大研发项目子课题，广东省自然科学基金项目等多个科研项目。
Personal CV：
Min Zeng is currently Professor of South China Academy of Advanced Optoelectronics at South China Normal University. He received his master degrees from School of Materials Science and Engineering, Jingdezhen Ceramic Institute, China, in 2004. During 2002-2004, he joined Professor Jun-Ming Liu’s group at Nanjing University as a Joint Master. He received his Ph. D degrees from Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, in 2010. He was an associate professor at South China Normal University from 2010, and was promoted to full professor in 2016. At present, Prof. Zeng published more than 90 SCI technical articles, including ACS Nano, NPJ Quantum Mater, Appl. Phys. Lett. etc. He has over 5 pending Patents, and 8 Grants.
研究方向：
1.多铁性材料(复合材料和异质结)的制备、表征和器件设计
2.电介质储能材料的制备、表征及其物理机理
3.二维材料的制备和表征及其气体传感领域的应用
Research topics:
1.Preparation, characterization and device design of multiferroic materials (composites and heterojunctions)
2.Preparation, characterization and physical mechanism of dielectric energy storage materials
3.Preparation and characterization of 2D materials and their applications in gas sensor
教育经历/Education：
2007年08月-2010年08月：香港理工大学应用物理系，博士
2007.08-2010.08 Department of Applied Physics, The Hong Kong Polytechnic University, Ph. D
2001年09月-2004年07月：景德镇陶瓷大学材料科学与工程学院/南京大学物理系(联合培养), 硕士
2001．9-2004.7 Joint training of School of Materials Science and Engineering, Jingdezhen Ceramic Institute, and School of Physics, Nanjing University, Master
1996年09月-1999年07月：景德镇陶瓷大学材料科学与工程学院, 学士
1996.09-1999.07 School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Bachelor
工作经历/Work Experience:
2016年12月-至今 华南师范大学华南先进光电子研究院，研究员
2016.12-now, South China Academy of Advanced Optoelectronics, South China Normal University, Professor
2015年09月-2016年09月 乔治梅森大学(美国)，访问学者
2015.9-2016.9 Department of Electrical and Computer Engineering, George Mason University and National Institute of standards and Technology, Visiting Scholar
2010年12月-2016年12月 华南师范大学华南先进光电子研究院，副教授
2010.12-2016.12, South China Academy of Advanced Optoelectronics, South China Normal University, Associate Professor
2006年08月-2007年08月 香港理工大学应用物理系，助理研究员
2006.7-2007.8 Department of Applied Physics, The Hong Kong Polytechnic University, Assistant Research
2004年07月-2006年08月 景德镇陶瓷大学，讲师
2004.7-2006.8 School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Assistant Teacher
1999年07月-2001年07月 佛山陶氏色釉料有限公司，研发员
1999.7-2001.7 Foshan Dow Color Glaze Co., Ltd., R & D personnel
科研项目(Projects)
1.主持国家重点研发计划项目子课题之子课题：“多场调控磁电材料-纳米尺度多场物性与输运性质测量及调控”，项目批准号：2016YFA0201004，执行时间：2016年06月-2021年07月，项目第二申请人，华南师范大学项目负责人：华师经费：94.0万元。
2.主持国家自然科学基金面上项目：“RMnO3多铁性薄膜的拓扑畴结构及其新颖光电磁新效应”，项目批准号：11574091，批准金额：84.0万元，执行时间：2016年01月-2019年12月。
3.主持国家自然科学基金重点项目子课题：“多铁性材料异质结和原型器件的设计、制备及性能调控研究”，项目批准号：51332007，执行时间：2014年01月-2018年12月，项目第二申请人，华南师范大学项目负责人：华师经费：90.0万元。
4.主持国家自然科学基金青年科学基金项目：“NiMnGa铁磁形状记忆合金/压电材料复合薄膜的磁电耦合效应研究”，项目批准号：51101063，批准金额：25万元；执行时间： 2012年01月-2014年12月。
5.主持广东省自然科学基金-自由申请项目：“多铁性材料异质结的设计，制备及性能研究”，项目批准号：2015A03031337， 批准金额：10.0万元，执行时间：2015年10月-2018年10月。
6.主持广东省自然科学基金-博士启动项目：“铁磁/铁电复合薄膜的磁电耦合效应及其机理研究”，项目批准号：S2011040003205，批准金额：3.0万元，执行时间：2011年10月-2013年10月。
7.参与2016年度广东省前沿与关键技术创新项目：“可印刷高介电常数绝缘显示材料关键技术研究”，项目批准号：2016B090907001, 负责金额：25.0万元，执行时间：2016年01月-2018年12月。
8.参与2016年度广东省科技计划应用型科技研发专项资金项目：“新型超高密度磁电随机存储及光存储材料与器件关键技术”，项目批准号：2015B090927006, 负责金额：10.0万元，执行时间：2015年12月-2018年12月
科研论文(Publications)
2019年
[1]X. L. Gao, Y. Li, J. W. Chen, C. Yuan, M. Zeng*, A. H. Zhang, X. S. Gao, X. B. Lu, Q. L. Li, J.-M. Liu, High energy storage performances of Bi1?xSmxFe0.95Sc0.05O3 lead-free ceramics synthesized by rapid hot press sintering, J. Eur. Ceram. Soc. 39, 2331 (2019).
[2]S. B. Yang, C. A. Wang, Y. Li, Y. Chen, A. H. Zhang, M. Zeng*, Z. Fan, X. S. Gao, X. B. Lu, J.-M. Liu, Hexagonal YMnO3 films as promising ultraviolet photodetectors, Ceram. Inter. 45 3239-3243 (2019).
2018年
[3]C. A. Wang, X. G. Fang, A. H. Zhang, M. Zeng*, Z. Fan, D. Y. Chen, X. S. Gao, X. B. Lu, Coupling of ferroelastic strain and ferroelectric phase transition in NiMnGa/Pb0.97La0.02(Zr0.95Ti0.05)O3 bilayered films, Ceram. Inter. 44, 17199 (2018).
[4]Y. Chen, J. W. Chen, S. B. Yang, Y. Li, X. L. Gao, M. Zeng*, Z. Fan, X. S. Gao, X. B. Lu, and J.-M. Liu, A bi-functional ferroelectric Pb(Zr0.52Ti0.48)O3 film: Energy storage properties and ferroelectric photovoltaic effects, Mater. Res. Bull. 107 456 (2018).
[5]J. X. Yao, X. Song, X. S. Gao, G. Tian, P. L. Li, H. Fan, Z. F. Huang, W. D. Yang, D. Y. Chen, Z. Fan, M. Zeng, and Jun-Ming Liu, Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures. ACS nano12, 6767 (2018).
[6]J. Chen, J. J. Liang, J. H. Yu, M. H. Qin, Z. Fan, M. Zeng, X. B. Lu, X. S. Gao, and J.-M. Liu, Dynamics of distorted skyrmions in strained chiral magnets, New J. Phys., 20, 063050 (2018).
[7]J. J. Liang, J. H. Yu, J. Chen, M. H. Qin, M. Zeng, X. B. Lu, X. S. Gao, and J.-M. Liu, Magnetic field gradient driven dynamics of isolated skyrmions and antiskyrmions in frustrated magnets, New J. Phys., 20, 053037 (2018).
2017年
[8]C. A. Wang, L. Yang, Z. W. Li,M. Zeng*, A. H. Zhang, M. H. Qin, X. B. Lu, X. S. Gao, J. W. Gao, Kwok Ho Lam, Giant room temperature multiferroicity and domain structures in hot-press sintered Bi0.85Sm0.15Fe0.97Sc0.03O3 ceramics, Ceram. Inter. 43, 12764 (2017).
[9]Z. Li, Y. Wang, G. Tian, P. Li, L, Zhao, F. Zhang J. Yao, H. F, X. Song, D. Y. Chen, Z. Fan, M. H. Qin, M. Zeng, Z. Zhang, X. B. Lu, S. Hu, C. Lei, Q. Zhu, J. Li, X. S. Gao, J.-M. Liu, High-density Array of Ferroelectric Nanodots with Robust and Reversibly Switchable Topological Domain States, Sci. Adv. 3, e1700919 (2017).
[10]P. L. Li, Z. F. Fang, Z. Fan, H. Fan, Q. Y. Luo, C. Chen D. Y. Chen. M. Zeng, M. H. Qin, Z. Zhang, X. B. Lu, X. S. Gao, and J.-M. Liu, An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping, ACS Appl. Mater. Interfaces 9, 27120-27126 (2017).
[11]G. Tian, D. Y. Chen, H. Fan, P. L. Li, Z. Fan, M. H. Qin, M. Zeng, J. Y. Dai, X. S. Gao, and J.-M. Liu, Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated via a Universal Nanopatterning Approach, ACS Appl. Mater. Interfaces 9, 37219-37226 (2017).
[12]H. Fan, Z. Fan, P. L. Li, F. Y. Zhang, G. Tian, J. X. Yao, Z. W. Li, X. Song, D. Y. Chen, B. Han, M. Zeng, S. J. Wu, Z. Zhang, M. H. Qin, X. B. Lu, J. W. Gao, Z. X. Lu, Z. Zhang, J. Y Dai, X. S Gao, and J.-M. Liu, Large electroresistance and tunable photovoltaic properties of ferroelectric nanoscale capacitors based on ultrathin super-tetragonal BiFeO3 films, J. Mater. Chem. C 5, 3323 (2017).
[13]Z. Fan, H. Fan, L. Yang, P. L. Li, Z. X. Lu, G. Tian, F. Y. Zhang, Z. W. Li, J. X. Yao, Q. Y. Luo, C. Chen, D. Y. Chen, X. Song, Z. B. Yan, M. Zeng, X. B. Lu, X. S Gao, and J.-M. Liu, Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions, J. Mater. Chem. C 5, 7317 (2017).
[14]H. Fan, C. Chen, Z. Fan, L. Y. Zhang, Z. W. Tan, P. L. Li, Z. F. Huang, J. X. Yao, G. Tian, Q. Y. Luo, Z. W. Li, X. Song, D. Y. Chen, M. Zeng, J. W. Gao, X. B. Lu, Y. Zhao, X. S. Gao, and J.-M. Liu, Resistive switching and photovoltaic effects in ferroelectric BaTiO3-based capacitors with Ti and Pt top electrodes, Appl. Phys. Lett. 111, 252901 (2017).
[15]X. S. Jing, W. C. Xu, C. Yang, J. J. Feng, A. H. Zhang, Y. P. Zeng, M. H. Qin, M. Zeng, Z. Fan, J. W. Gao, X. S. Gao, G. F. Zhou, X. B. Lu, and J.-M. Liu, Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping, Appl. Phys. Lett. 110, 182903 (2017).
2016年
[16]C. Liu, S. X. Lin, M. H. Qin, X. B. Lu, X. S. Gao, M. Zeng*, Q. L. Li, and J. -M. Liu, “Energy storage and polarization switching kinetics of (001)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3”, Appl. Phys. Lett. 108, 112903 (2016).
[17]H. Z. Pang, F. Y. Zhang, M. Zeng*, X. S. Gao, M. H. Qin, X. B. Lu, J. W. Gao, J. Y. Dai, and Q. L. Li, “Preparation of epitaxial hexagonal YMnO3 thin films and observation of ferroelectric vortex domains”, npj Quantum Materials 1,16015 (2016).
[18]L. Yang, X. Li, M. F. Liu, P. L. Li, Z. B. Yan, M. Zeng*, M. H. Qin, X. S. Gao, and J. -M. Liu, “Understanding the multiferroicity in TmMn2O5 by a magnetically induced ferrielectric model”, Sci.Rep.6, 34767 (2016).
[19]L. Yang, C. A. Wang, C. Liu, M. H. Qin, X. B. Lu, X. S. Gao, M. Zeng*, and J. -M. Liu, “Strain-induced insulator-metal transition in ferroelectric BaTiO3(001) surface: First-principles study”, Chin. Phys. B 25, 077302 (2016).
[20]G. Tian, F. Y. Zhang, J. X. Yao, H. Fan, P. L. Li, Z. W. Li, X. Song, X. Y. Zhang, M. H. Qin, M. Zeng, Z. Zhang, J. J. Yao, X. S. Gao, and J. -M. Liu, “Magnetoelectric coupling in well-ordered epitaxial BiFeO3/CoFe2O4/SrRuO3 heterostructured nanodot array”, ACS Nano 10, 1025-1032 (2016).
[21]Z. X. Lu, Z. Fan, P. L. Li, H. Fan, G. Tian, X. Song, Z. W. Li, L. N. Zhao, K. R Huang, F. Y. Zhang, Z. Zhang, M. Zeng, X. S. Gao, J. J. Feng, J. G. Wan, and J. -M. Liu, “Ferroelectric resistive switching in high-density nanocapacitor arrays based on BiFeO3ultrathin films and ordered Pt nanoelectrodes”, ACS Appl. Mater. Interfaces 8, 23963-23968 (2016).
[22]W. Q. He, W. C. Xu, Q. Peng, C. Liu, G. F. Zhou, S. J. Wu, M. Zeng, Z. Zhang, J. W. Gao, X. S. Gao, X. B. Lu, and J. -M. Liu, “Surface modification on solution processable ZrO2 High-k Diel for low voltage operations of organic thin film transistors”, J. Phys. Chem. C 120, 9949-9957(2016).
[23]Z. R. Yan, M. H. Qin, S. Dong, M. Zeng, X. B. Lu, X. S. Gao, and J. -M. Liu, “Spin glass state and enhanced spiral phase in doped delafossite oxide CuCrO2”, Phys. Rev. B 94, 024410 (2016).
[24]F. Y. Zhang, Q. Miao, G. Tian, Z. X. Lu, L. N. Zhao, H. Fan, X. Song, Z. W. Li, M. Zeng, X. S. Gao, and J.-M. Liu, “Unique nano-domain structures in self-assembled BiFeO3 and Pb(Zr,Ti)O3 ferroelectric nanocapacitors”, Nanotechnology 27, 015703 (2016).
[25]G. Tian, L. N. Zhao, Z. X. Lu, J. X. Yao, H. Fan, Z. Fan, Z. W. Li, P. L. Li, D. Y. Chen, X. Y. Zhang, M. H. Qin, M. Zeng, Z. Zhang, J. Y. Dai, X. S. Gao, and J. -M. Liu, “Fabrication of high-density BiFeO3nanodot and anti-nanodotarrays by anodic alumina template-assisted ion beam etching”, Nanotechnology 27,485302 (2016).
[26]J. Zhou, X. S. Jing, M. Alexe, J. Y. Dai, M. H. Qin, S. J. Wu, M. Zeng, J. W. Gao, X. B. Lu, and J. -M. Liu, “Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3 thin films”, J. Phys. D: Appl. Phys. 49, 175302 (2016).
[27]J. Chen, W. Z. Zhuo, M. H. Qin, S. Dong, M. Zeng, X. B. Lu, X. S. Gao, and J. -M. Liu, “Effect of further-neighbor interactions on the magnetization behaviors of the Ising model on a triangular lattice”, J. Phys.: Cond. Matt. 75, 106516(2016).
[28]W. Z. Zhuo, J. Chen, M. H. Qin, M. Zeng, X. B. Lu, X. S. Gao, and J. -M. Liu, “The fractional magnetization plateaus of synthetic triangular heterostructures: Monte Carlo simulation”, Comp. Mater. Sci. 115, 104-108 (2016).
[29]Q. Peng, S. R. Li, B. Han, Q. K. Rong, X. B. Lu, Q. M. Wang, M. Zeng, G. F. Zhou, J. -M. Liu, K. Kempa, and J. W. Gao, “Colossal figure of merit in transparent-conducting metallic ribbon networks”, Adv. Mater. Technol. 1600095 (2016).
2015年
[30]C. A. Wang, H. Z. Pang, A. H. Zhang, X. B. Lu, X. S. Gao, M. Zeng*, J.-M. Liu, Room temperature multiferroic and magnetodielectric properties in Sm and Sc co-doped BiFeO3ceramics, J. Phys. D: Appl. Mater. 48,395302 (2015).
[31]C. A. Wang, H. Z. Pang, A. H. Zhang, X. B. Lu, X. S. Gao, M. Zeng*, J.-M. Liu, Enhanced ferroelectric polarization and magnetization in BiFe1-xScxO3 ceramics, Mater. Res. Bull., 70 595 (2015).
[32]X. G. Fang, S. X. Lin, A. H. Zhang, X. B. Lu, X. S. Gao, M. Zeng*, J.-M. Liu, Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films, Sol. State Commun. 219, 39-42 (2015).
[33]L. N Zhao, Z. X. Lu, F. Y. Zhang, X. Song, Z. W. Li, K. R. Huang, Z. Zhang, M. H. Qin, S. J. Wu, X. B. Lu, M. Zeng, X. S. Gao, J. Y. Dai, J.-M. Liu, Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrate, Sci. Rep, 5,9680 (2015).
[34]T. Guo, X. Song, P. L. Li, M.H. Qin, M. Zeng, X. S. Gao and J.M. Liu, A Monte Carlo study of the anisotropy effects on the spin state evolution in ultrathin helimagnet nanorings, Euro. Phys. Lett., 109, 17002 (2015).
[35]J. J. Gong, J. P. Chen, F. Zhang, H. Wu, M-H. Qin, M. Zeng, X. S. Gao, and Liu J-M. Liu, Tailoring the structural and magnetic properties of Cu-doped ZnO by c-axis pressure, Chin. Phys. B 24, 000001 (2015).
[36]Z. X. Lu, X. Song, L. N. Zhao, Z. W. Li, Y. B. Lin, M. Zeng, Z. Zhang, X. B. Lu, S. J. Wu, X. S. Gao, Z. B. Yan, and J.-M. Liu, Temperature Dependence of Ferroelectricity and Resistive Switching Behaviors in Epitaxial BiFeO3 Thin Films, Chin. Phys. B, 24, 107705 (2015).
[37]Y. Y Shao, Y. Zhang, W. Q. He, C. Liu, T. Minari, S. J. Wu, M. Zeng, Z. Zhang, X. S. Gao, X. B. Lu, J.-M. Liu, Role of growth temperature on the frequency response characteristics of pentacene-based organic devices, Semiconductor science and technology, 30, 035005, (2015).
[38]M. Li, J. Zhou, X. S. Jing, M. Zeng, S. J. Wu, J. W. Gao, Z. Zhang, X. S. Gao, X. B. Lu, J.-M. Liu, and Marin Alexe, Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies, Adv. Electron. Mater. 1500069(2015).
[39]W. C. Li, X. Song, J. J. Feng, X. T. Jia, M. Zeng, X. S. Gao, and M. H. Qin, Random exchange interaction effects on the phase transitions in frustrated classical Heisenberg model, J. Appl. Phys.118, 013901 (2015).
2014年
[40]X. G. Fang, S. X. Lin, M. H Qin, X. S. Gao, M. Zeng*, and J.-M. Liu, Structure, magnetism and spin polarization in (Ni1?xCox)2MnGa alloys: Unusual composition dependences, Euro. Phys. Lett., 105, 47010 (2014).
[41]S. X. Lin, X. G. Fang, A. H. Zhang, X. B. Lu, J. W. Gao, X. S. Gao, M. Zeng*, J.-M. Liu, Uniaxial strain-induced magnetic order transition from E-type to A-type in orthorhombic YMnO3 from first-principles, J. Appl. Phys. 116, 163705 (2014).
[42]Q. Miao, M. Zeng, Z. Zhang, X. B. Lu, J. Y. Dai, X. S. Gao, and J.-M. Liu, Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3 films, Applied Physics Letters, 104, 182903 (2014)
[43]Y. B. Lin, Z. B. Yan , X. B. Lu, Z. X. Lu, M. Zeng, Y. Chen, X. S. Gao, J. G. Wan,. Y. Dai, and J.-M. Liu, Temperature-dependent and polarization-tuned resistive switching inAu/BiFeO3/SrRuO3 junctions, Appl. Phys. Lett. 104, 143503 (2014)
[44]Y. Zhang, Y. Y. Shao, X. B. Lu, M. Zeng ,Z. Zhang, X. S. Gao, X. J. Zhang, J.-M. Liu, and J. Y. Dai, Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications, Appl. Phys. Lett. 105, 172902 (2014)
[45]M. Li, Y. Zhang, Y. Y. Shao, M. Zeng, Z. Zhang, X. S. Gao, X. B. Lu, J.-M. Liu, and H. Ishiwara, Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films，J. Electronic Mater. 43, 3625 (2014).
[46]F. Zhang, Y. B. Lin, H. Wu, Q. Miao, J. J. Gong, J. P. Chen, S. J. Wu, M. Zeng, X. S. Gao, and J.-M. Liu, Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films, Chin. Phys. B 23 027702 (2014)
2013年
[47]R. P. Yang, S. X. Lin, X. G. Fang, X. S. Gao, M. Zeng*, J.-M. Liu, First-principles study on the magnetic properties in Mg doped BiFeO3 with and without oxygen vacancies, J. Appl. Phys. 114, 233912 (2013).
[48]L. Y. Zou, R. P. Yang, Y. B. Lin, M. H. Qin, X. S. Gao, M. Zeng*, J.-M. Liu, Dielectric and magnetic properties of BiFe1-4x/3TixO3 ceramics with iron vacancies: Experiment and first-principles studies, J. Appl. Phys. 114, 034105 (2013).
[49]Y. J. Guan, Y. B. Lin, L. Y. Zou, Q. M, M. Zeng, Z. W. Liu, X. S. Gao, and J.-M. Liu, The effects of Co-Ti co-doping on the magnetic, electrical, and magnetodielectric behaviors of M-type barium hexaferrites, AIP Advance 3, 122115 (2013)
[50]X. M. Chen, Y. H. Zou, G. L. Yuan, M. Zeng, J.-M. Liu, J. Yin, and Z. G. Liu Temperature Gradient Introduced Ferroelectric Self-Poling in BiFeO3 Ceramics, J. Am. Ceram. Soc. 96, 3788 (2013)
[51]J. P. Chen, Z. Q. Wang, J. J. Gong, M. H. Qin, M. Zeng, X. S. Gao, and J.-M. Liu, Stripe-vortex transitions in ultrathin magnetic nanostructures, J. Appl. Phys. 113, 054312 (2013).
[52]H. Wu, Y. B. Lin, F. Zhang, J. J. Gong, Z. Yang, M. Zeng, M. H. Qin, Z. Zhang, Q. Ru, Z. W. Liu, X. S. Gao, J.-M. Liu, Significant enhancements of dielectric and magnetic properties in Bi(Fe1-xMgx)O3-x/2 induced by oxygen vacancies, J. Phys. D Appl. Phys. 46, 145001 (2013).
2012年以前
[53]M. Zeng*, J. Liu, Y. B. Qin, H. X Yang, J. Q. Li, and J. Y Dai. Dielectric tunability and magnetoelectric coupling in LuFe2O4 epitaxial thin film deposited by pulsed-laser deposition, Thin Solid Films 520, 6446 (2012).
[54]L. H. Zhang, K. Pei, M. D. Yu, Y. L. Huang, H. B. Zhao, M. Zeng, Y. Wang, and J. W. Gao, Theoretical Investigations on Donor–Acceptor Conjugated Copolymers Based on Naphtho 1,2-c:5,6-c]bis[1,2,5] thiadiazole for Organic Solar Cell Applications, J. Phys. Chem. C 116, 26154 (2012).
[55]M. H. Qin, Y. M. Tao, M. Zeng, X. S. Gao, S. J. Wu, S. Dong, and J.-M. Liu, Multiferroic Phase Competitions in Perovskite Manganite Thin Films, Appl. Phys. Lett. 100, 052410 (2012).
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专利
[1]“一种反铁电-顺电材料耦合的电容器电介质及其制备方法”， 曾敏、刘聪、陆旭兵、高兴森、刘俊明。专利号：ZL201610906142.3。发明专利
[2]“一种基于六角YMnO3外延薄膜的平面紫外光探测器及其制备方法”，曾敏、杨双宾、陆旭兵、高兴森、刘俊明。申请号：201810194721.9。发明专利
[3]“一种基于外延多铁薄膜铁电储存器件及其制备方法”, 曾敏、陈义、李晔、陆旭兵、高兴森、刘俊明。申请号：201810575100.5。发明专利
[4]“一种铁电薄膜材料的电容器和光伏器件及其制备方法”, 曾敏、陈义、陈建伟、陆旭兵、高兴森、刘俊明。申请号：201810575033.7。发明专利
[5]“一种高性能环保电容器电介质及其制备方法” 曾敏、高贤禄、陆旭兵、高兴森、刘俊明。申请号：201810797027.6。发明专利