张璋

2014-10-21 16:30:22   来源:    点击:

张璋.png 

张璋   教授,硕士生导师

Zhangzhang

Professor , Master Tutor

简介/Summary

研究领域:

1. 低维纳米材料、硅基纳米半导体器件制备和表征

2. 多铁性低维材料的制备 (磁电耦合效应)

3. SERS基底的制备、性质及应用

4. 低维光催化材料的制备及应用

Areas of Research

1. Preparation and characterization of low dimensional nanomaterials, silicon- based nano semiconductor devices

2. Preparation of multiferroic low dimensional materials (magnetoelectric coupling effect)

3. Preparationproperties and applications of SERS substrates

4. Preparation and application of low dimensional photocatalytic materials

 

科研经历:

2007年进入德国马克思普朗克微结构物理所Ulrich G?sele教授领导的研究小组,从事博士研究生工作。期间有幸参与并完成了欧盟半导体纳米线电子器件项目(NODE),参与设计并搭建了世界上第一套高真空多功能化学气相生长系统(UHV-CVD+CBE)。研究了外延生长硅纳米线阵列的有序化问题,实现了具有锗/硅异质结界面的阵列结构表征,还完成了可控同位素硅纳米线外延和金属辅助刻蚀硅纳米线表征等成果。博士毕业后继续马普协会对外科学合作项目的博士后工作一年。201110月,被华南师范大学聘为教授,在华南先进光电子研究院先进材料研究所从事教学科研工作至今。

Experience of Research

In the research group directed by Professor Ulrich G?sele, Halle Germany, Marx Planck Institute of microstructure physics (2007-2011), engaged in PhD and Postdoc work. I had participated in and completed the European project of semiconductor nanowire electronic devices (NODE project), had designed and built the first multi-purpose high vacuum chemical vapor deposition system (UHV-CVD+CBE). The main achievements include the realization of epitaxial growth of ordered silicon nanowire arraysthe characterization of Ge / Si nanowire heterojunction interfacecontrolled isotope silicon nanowire epitaxy and metal assisted etching of Si nanowires.After a postdoc work in MPI-Halle with a foreign scientific cooperation project, I was hired as a professor at the South China Normal University in October,2011,and engaged in teaching and research work in the Institute of Advanced Materials ,South China Academy of Advacned Optoelectronics.

 

学术成果:已发表SCI论文30余篇,已授权国家发明专利2项。

Scientific achievements: >30 SCI articles,  two national invention patents have been authorized.

 

详细信息/Detailed Information

学习和工作经历/Study and Work Experience

2011-现在:华南师范大学华南先进光电子研究院,教授

2011 - now: Professor, South China Normal University, Guangzhou,China

20109-201110月:德国马普微结构物理研究所,博士后;

2010.09 -2011.10: postdoc, MPI-Halle, Germany

20095-20097月:瑞典伦德大学,青年访问科学家;

2009.05 -2009.07 :  Lund University ;Sweden ; Young visiting scientist

20085-20087月:IBM瑞士苏黎世研究所,青年访问科学家;

2008.05-2008.07: IBM Institute in Zurich, Switzerland; Young visiting scientist

2007-2010年:德国马普微结构物理研究所,自然科学博士;

2007 -2010: Dr. rer.nat., MPI-Halle, Germany

2004-2007年:复旦大学信息科学与工程学院信息学院光科学与工程系,理学硕士; 

2004 -2007: Department of Optical Science and Engineering ,School of information science and engineering , Fudan University, Shanghai ; Master of Science

2000-2004年:中山大学理工学院物理系,理学学士;

2000 -2004:  Department of physics, College of science and engineering, Sun Yat-sen University, Guangzhou; Bachelor of Science

 

发表论文/ Refereed Journal Articles:

1. Zhang. Z(张璋), Lai. C, Xu. N, Ren. S; Ma. B, Zhang. Z, Jin. Q*, "Novel nanostructured metallic nanorod arrays with multibranched root tails",  NanotechnologyIF:3.442007, 18,6,095603.

2. Huang. Z*, Shimizu. T, Senz. S, Zhang. Z(张璋), Zhang. X, Lee. W, Geyer. N, Goesele. U, "Ordered Arrays of Vertically Aligned 110 Silicon Nanowires by Suppressing the Crystallographically Preferred Etching Directions", Nano LettersIF:12.7122009, 9, 2519-2525.

3. Moutanabbir. O*, Senz. S, Zhang. Z(张璋), Goesele. U, "Synthesis of isotopically controlled metal-catalyzed silicon nanowires", Nano Today IF:17.4762009, 4, 393-398.

4. Shimizu. T, Zhang. Z(张璋)*, Shingubara. S, Senz. S, Goesele. U, "Vertical Epitaxial Wire-on-Wire Growth of Ge/Si on Si(100) Substrate", Nano LettersIF:12.7122009, 9, 1523-1526.

5. Zhang. Z(张璋)*, Shimizu. T, Chen. L, Senz. S, Goesele. U, "Bottom-Imprint Method for VSS Growth of Epitaxial Silicon Nanowire Arrays with an Aluminium Catalyst", Advanced MaterialsIF:19.7912009, 21, 4701.

6. Zhang. Z(张璋)*, Shimizu. T, Senz. S, Goesele. U, "Ordered High-Density Si100Nanowire Arrays Epitaxially Grown by Bottom Imprint Method", Advanced MaterialsIF:19.791 2009, 21, 2824.

7. Zhang. Z(张璋)*, Liu. L, Shimizu. T, Senz. S, Goesele. U, "Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template", NanotechnologyIF:3.44 2010, 21.

8. Zhang. Z(张璋), Zhang. L*, Senz. S, Knez. M, "Immobilization of Apoferritin-Templated Seeds for Si Nanowire Growth", Chemical Vapor DepositionIF:1.333 2011, 17, 149-154.

9. Zhang. Z(张璋)*, Senz. S, Zhao. F, Chen. L, Gao. X, Liu. J. M, "Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy", Rsc AdvancesIF:3.1082012, 2, 8631-8636.

10. Wu. H, Lin. Y. B, Gong. J. J, Zhang. F, Zeng. M, Qin. M*, Zhang. Z(张璋), Ru. Q, Liu. Z. W, Gao. X. S, Liu. J. M, "Significant enhancements of dielectric and magnetic properties in Bi(Fe1-xMgx)O3-x/2 induced by oxygen vacancies", Journal Of Physics D-Applied Physics IF:2.5882013, 46.

11. Li. M, Zhang. Y, Shao. Y, Zeng. M, Zhang. Z(张璋), Gao. X, Lu. X*, Liu. J. M, Ishiwara. H, "Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films", Journal Of Electronic MaterialsIF:1.5792014, 43, 3625-3629.

12. Miao. Q, Zeng. M*, Zhang. Z(张璋), Lu. X, Dai. J, Gao. X, Liu. J. M, "Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3 films", Applied Physics Letters IF:3.4112014, 104.

13. Zhou. Q, Zhang. Z(张璋)*, Senz. S, Fuli. Z, Li j. C, Lu. X, Gao. X, Liu. J, "Control of defects in a novel aluminum-induced heteroepitaxial growth of AlxGal-xP nanocrystals on silicon nanowires", Scripta MaterialiaIF:3.7472014, 89, 57-60.

14. Zhang. Y, Shao. Y. Y, Lu. X*, Zeng. M, Zhang. Z(张璋), Gao. X, Zhang. X. J, Liu. J, Dai. J, "Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications", Applied Physics LettersIF:3.4112014, 105.

15. Huang. K, Zhang. Z(张璋)*, Zhou. Q, Liu. L, Zhang. X, Kang. M, Zhao. F, Lu. X, Gao. X, Liu. J, "Silver catalyzed gallium phosphide nanowires integrated on silicon and in situ Ag-alloying induced bandgap transition", NanotechnologyIF:3.442015, 26.

16. Li. M, Zhou. J, Jing. X, Zeng. M, Wu. S, Gao. J, Zhang. Z(张璋), Gao. X, Lu. X*, Liu. J, Alexe. M, "Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies", Advanced Electronic MaterialsIF:4.1932015, 1.

17. Liu. L, Jin. M, Zhou. Q, Zhan. R, Chen. H, Gao. X, Senz. S, Zhang. Z(张璋)*, Liu. J, "Bottom-up growth of Ag/a-Si@Ag arrays on silicon as a surface-enhanced Raman scattering substrate with high sensitivity and large-area uniformity", Rsc AdvancesIF:3.1082015, 5, 19229-19235.

18. Shao. Y, Zhang. Y, He. W, Liu. C, Minari. T, Wu. S, Zeng. M, Zhang. Z(张璋), Gao. X, Lu. X*, Liu. J. M, "Role of growth temperature on the frequency response characteristics of pentacene-based organic devices", Semiconductor Science And TechnologyIF:2.3052015, 30.

19. Zhang. X, Kang. M, Huang. K, Zhang. F, Lin. S, Gao. X, Lu. X, Zhang. Z(张璋)*, Liu. J, "One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti0.48)O3 Nanodot Arrays", Nanoscale Research LettersIF:2.8332015, 10.

20. Zhao. L, Lu. Z, Zhang. F, Tian. G, Song. X, Li. Z, Huang. K, Zhang. Z(张璋), Qin. M, Wu. S, Lu. X, Zeng. M, Gao. X, Dai. J, Liu. J, "Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates", Scientific ReportsIF:4.259 2015, 5.

21. Zhou. Q, Liu. L, Gao. X, Chen. L, Senz. S, Zhang. Z(张璋)*, Liu. J, "Epitaxial growth of vertically free-standing ultra-thin silicon nanowires", NanotechnologyIF:3.442015, 26.

22. He. W, Xu. W, Peng. Q, Liu. C, Zhou. G, Wu. S, Zeng. M, Zhang. Z(张璋),Zhang. Z(张璋), Gao. J, Gao. X, Lu. X*, Liu. J. M, "Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors", Journal Of Physical Chemistry CIF:4.5362016, 120, 9949-9957.

23. Kang. M, Zhang. X, Liu. L. Zhou. Q. Jin. M, Zhou. G, Gao. X, Lu. X, Zhang. Z(张璋), Liu. J, "High-density ordered Ag@Al2O3 nanobowl arrays in applications of surface-enhanced Raman spectroscopy", NanotechnologyIF:3.442016, 27.

24. Liu. L. W, Zhou. Q.W, Zeng. Z, Jin. M.L, Zhou. G, Zhan. R, Chen. H, Gao. X, Lu. X.B, Senz. S, Zhang. Z(张璋)*, Liu. J. M, "nduced SERS activity in Ag@SiO2/Ag core-shell nanosphere arrays with tunable interior insulator", Journal Of Raman SpectroscopyIF:2.9692016, 47, 1200-1206.

25. Lu. Z, Fan. Z, Li. P, Fan. H, Tian. G, Song. X, Li. Z, Zhao. L, Huang. K, Zhang. F, Zhang. Z(张璋), Zeng. M, Gao. X*, Feng. J, Wan. J, Liu. J, "Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes", Acs Applied Materials & InterfacesIF:7.5042016, 8, 23963-23968.

26. Tian. G, Zhang. F, Yao. J, Fan. H, Li. P, Li. Z, Song. X, Zhang. X, Qin. M, Zeng. M, Zhang. Z(张璋), Yao. J, Gao. X*, Liu. J, "Magnetoelectric Coupling in Well-Ordered Epitaxial BiFeO3/CoFe2O4/SrRuO3 Heterostructured Nanodot Array", Acs NanoIF:13.9422016,10, 1025-1032.

27. Zeng. Z, Tang, D, Liu L, Wang. Y, Zhou. Q, Su. S, Hu. D, Han. B, Jin. M, Ao. X, Zhan. R, Gao. X, Lu. X, Zhou. G, Senz. S, Zhang. Z(张璋)*, Liu. J, "Highly reproducible surface-enhanced Raman scattering substrate for detection of phenolic pollutants", NanotechnologyIF:3.442016, 27.

28. Zeng. Z, Zhou. Q, Yang. Z, Miao. Q, Gao. X, Zhou. G, Zhang. Z(张璋)*, "Size-Controlled Growth of High-Density Ordered Nanomagnet Arrays by Template-Assisted Method", Journal Of Nanoscience And NanotechnologyIF:1.4832016, 16, 12231-12236.

29. Zhang. X, Tang. D, Huang. K, Hu. D, Zhang. F, Gao. X, Lu. X, Zhou. G, Zhang. Z(张璋)*, Liu. J, "Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching", Nanoscale Research LettersIF:2.8332016, 11.

30. Fan. H, Fan. Z, Li. P, Zhang. F. Tian. G, Yao. J, Li. Z, Song. X, Chen. D, Han. B, Zeng. M, Wu. S, Zhang. Z, Qin. M, Lu. X, Gao. X*, J. Lu. Z, Zhang. Z(张璋), Dai. J. Gao. X, Liu. J, "Large electroresistance and tunable photovoltaic properties of ferroelectric nanoscale capacitors based on ultrathin super-tetragonal BiFeO3 films". Journal Of Physical Chemistry CIF:4.5362017, 5, 3323-3329.

31. Tang. D, Zeng. Z, Zhou. Q, Su. S, Hu. D, Li. P, Lin. X, Gao. X, Lu. X, Wang. X, Jin. M, Zhou. G, Zhang. Z(张璋)*, Liu. J, "Ordered multiferroic CoFe2O4-Pb(Zr0.52Ti0.48)O3 coaxial nanotube arrays with enhanced magnetoelectric coupling", Rsc AdvancesIF:3.1082017, 7, 29096-29102.

32. Wang. J, Jin. M, Gong. Y, Li. H, Wu. S, Zhang. Z(张璋), Zhou. G, Shui. L*, Eijkel. J. C. T, van den Berg. A, "Continuous fabrication of microcapsules with controllable metal covered nanoparticle arrays using droplet microfluidics for localized surface plasmon resonance", Lab on a ChipIF:6.0452017, 17, 1970-1979.

33. W. C. Xu, H. X. He, X. S. Jing, S. J. Wu, Z. Zhang(张璋), J. W. Gao,  X. S. Gao, G. F. Zhou , X. B. Lu, J.-M. Liu, “High performance organic nonvolatile memory transistors based on HfO2 and poly(#-methylstyrene) electret hybrid charge-trapping layers”, Applied Physics LettersIF:3.4112017, 111(6): 063302.

34. Zhongwen Li, Yujia Wang, Guo Tian, Peilian Li, Lina Zhao, Fengyuan Zhang, Junxiang Yao, Hua Fan, Xiao Song, Deyang Chen, Zhen Fan, Minghui Qin, Min Zeng, Zhang Zhang(张璋), Xubing Lu, Shejun Hu, Chihou Lei, Qingfeng Zhu, Jiangyu Li, Xingsen Gao,and Jun-Ming Liu, “High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states”, Science Advances  arXiv preprint arXiv:1703.10335, 2017


专利/Patents 

(1) 张璋,刘利伟,高兴森,一种基于化学气相沉积制备表面增强活性基底的方法,中国发明专利授权号:ZL201410321419.7,申请日:201477日,授权公告日:2016622日。

(2) 张璋,刘利伟,高兴森,一种Ag-SiO2-Ag 纳米球阵列的制备方法,中国发明     专利授权号:ZL201510053810.8.,申请日:201747日。

(3) 张璋,张晓燕,高兴森,一步模板法制备有序纳米点阵列的方法,中国发明专利申请号:201510487320.9,申请日:2015811日。

(4) 张璋,张晓燕,黄康荣,一种制备垂直有序铁电纳米杯阵列的方法,中国发明专利申请号:201510791183.8,申请日:20151118日。

(5) 张璋,亢梦洋,一种基于离子刻蚀制备表面拉曼增强活性基底的方法,中国发明专利申请号:201510743028.9,申请日:2015330日。

(6) 张璋,曾志强,苏绍强,一种制备有序银纳米球阵列的方法, 中国发明专利申请号:2016106558664.6, 申请日:2016812日。

(7) 张璋,曾志强,苏绍强,一种制备高均匀性表面拉曼增强活性基底的方法, 中国发明专利申请号:201610657600.4, 申请日:2016812日。

(8) 曾志强,张璋,王新,汤丹,苏绍强,一种超高密度有序银纳米球阵列及其应用 中国发明专利申请号: 201710188407.5,申请日:2017327日。

(9) 张璋,苏绍强,曾志强,汤丹,一种制备高密度多孔二维二硫化钼纳米片的方法 中国发明专利申请号: 201710199969.X,申请日:2017327日。

(10) 张璋,汤丹,王新,一种制备垂直有序多铁性双层纳米管阵列的方法,中国发明专利申请号:201710140154.4,申请日:2017310日。

11)张璋,胡蝶,向杰,程鹏飞,一种超薄二硫化钼纳米片/硅纳米线异质结结构的制备方法,中国发明专利申请号:201710620602.0,申请日:2017727日。

  

科研项目/Projects :

(1) 广东省高等学校人才引进项目可用于下一代高密度半导体电子器件的超细硅纳米线有序外延阵列的研究(已结题),2012-2015,50万,负责人。

(2) 国家自然科学基金青年科学基金项目“10纳米以下直径硅纳米线有序垂直阵列的模板辅助外延生长研究51204344,2013.01-2015.12,25万,负责人。

(3) 广东省自然科学基金项目可应用于生物传感的新型硅纳米线阵列无栅化场效应晶体管材料的研究2014A030313434),2015.01-2018.0110万,负责人。

(4) 广州市珠江科技新星项目可应用于生物传感的新型硅纳米线阵列无栅化场效应晶体管材料的研究201506010019,2015.04-2018.0330万,负责人。

(5) 作为核心骨干成员参与广州市对外科技合作专项:纳米功能信息材料与器件对外科技合作平台,(2014J4500016),2014.01-2016.12,70万,核心骨干人员。

(6) 作为核心骨干成员参与广东省应用型科技研发专项资金项目:新型超高密度磁电存储及光存储材料与器件关键技术(2015B090927006),2015.12-2018.12300,核心骨干人员。

(7) 作为核心骨干成员参与广东省自然科学基金项目:功能铁电及多铁材料纳米阵列结构的制备及相关新颖物性研究(2016A030308019)2016.06-2020.06100万,核心骨干人员。

(8) 作为核心骨干成员参与国家重点研发项目:纳米尺度多场性与输运性质测量及调控的子课题极化调控光电转换(2016YFA0201002)2016.07-2021.06623万,核心骨干人员。

(9) 作为核心骨干成员参与国家重点研发项目:电子纸显示关键材料与技术(2016YFB0401501)2016.07-2021.06665万,核心骨干人员。

(10) 作为核心骨干成员参与肇庆市第一批西江创新创业团队项目:基于太阳电池的光电催化分解水制氢耦合降解污染物清洁能源器件的制备及关键材料的研究2017.01-2019.12,300万,核心骨干人员。

 

其他奖励/Others :  

(1) 20154月,荣获广州市珠江科技新星

(2) 20105月,获得国家优秀自费留学生奖学金


联系信息/Contact Information :

Tel.13660357067

Emailzzhang@scnu.edu.cn

Building 5, South China Normal University at Guangzhou Higher Educational Mega Center, Guangzhou 510006, China