理查德·内策尔（Richard Noetzel ）教授，男，德国人。1989年，获得德国慕尼黑工业大学物理学士学位；1990年，在位于斯图加特的马克思普兰克凝聚态物理研究所进修，并在1992年获得斯图加特大学半导体物理博士学位；1993年加入位于日本厚木的NNT公司；1995年，成为日本北海道大学的客座教授；1995年，在德国柏林的保罗·德鲁德固态电子研究所工作；2000年，成为荷兰埃因霍温理工大学副教授；2011年，加入西班牙马德里技术大学，担任纳米技术研究组主席；2014年，受邀前往意大利米兰可比卡大学担任教授。
理查德·内策尔教授在半导体纳米结构外延生长及其光电和电子器件方面拥有超过25年的研究经验。主要研究工作包括半导体和金属纳米结构的直接外延生长和电学性质及其在新型功能器件中的应用。其学术成果包括：超过500篇的学术论文，其中4篇发表于Nature，以及获得8项国际专利授权。曾申获并主持20多个欧洲与国际科学研究项目，科研经费超过300万欧元。
研究方向: 半导体量子点材料
联系方式： richard.noetzel@m.scnu.edu.cn
学术专著：
[1] Author(s): R. N?tzel, J. Temmyo, and T. Tamamura
Title: Self-organized growth of strained InGaAs quantum disks
Source: NATURE Volume: 369 Issue: 6476 Pages: 131-133
DOI: 10.1038/369131a0 Published : 12 MAY 1994 Times Cited: 341
(引用次数：341, 影响因子：38.138).
[2]Author(s): R. N?tzel, Z.C. Niu, M. Ramsteiner, H.P. Sch?nherr, A. Trampert, L. D?weritz, and K.H. Ploog
Title:Uniform quantum dot arrays formed by natural self-faceting on patterned substrates
Source: NATURE Volume: 392 Issue: 6671 Pages: 56-59
DOI: 10.1038/32127 Published : MAY 1998 Times Cited: 99
(引用次数：99, 影响因子：38.138)
[3]Author(s): M.T. Hill*, Y.-S. Oei, B. Smalbrugge, Y. Zhu, T. de Vries, P.J. van Veldhoven, F.W.M. van Otten, T.J. Eijkemans, J.P. Turkiewicz, H. de Waardt, E.J. Geluk, S.-H. Kwon, Y.-H. Lee, R. N?tzel, and M.K. Smit
Title:Lasing in metallic-coated nanocavities
Source: NATURE PHOTONICS Volume: 1 Issue: 10 Pages: 589-594
DOI: 10.1038/nphoton.2007.171 Published : OCT 2007 Times Cited: 536
(引用次数：536, 影响因子：38.91)
[4]Author(s): N. A. J. M. Kleemans, J. van Bree, A. O. Govorov, J. G. Keizer, G. J. Hamhuis, R. N?tzel, A. Yu. Silov*, and P. M. Koenraad
Title: Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea
Source: NATURE PHYSICS Volume: 6 Issue: 7 Pages: 534-538.
DOI: 10.1038/NPHYS1673 Published : JUL 2010 Times Cited: 34
(引用次数：34, 影响因子：22.684)
[5] Author(s): R. N?tzel, N. Ledentsov, L. D?weritz, M. Hohenstein, and K. Ploog
Title: Direct synthesis of corrugated superlattices on non-(100) oriented surfaces
Source: Physical Review Letters Volume: 67 Issue: 27 Pages: 3812-3826.
DOI: 10.1103/PhysRevLett.67.381Published : Dec. 1991Times Cited: 277
(引用次数：277, 影响因子：7.645)
[6]Author(s): Naveed ul Hassan Alvia*, Paul Eduardo David Soto Rodrigueza,Pavel Aseeva, Víctor Jesús Gómeza, Ameed ul Hassan Alvib, Waheed ul Hassanc, Magnus Willanderd, Richard N?tzele*
Title:InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
Source: Nano Energy Volume: 13 Issue: 2 Pages: 291-297.
DOI: 10.1016/j. nanoen. 2015. 02. 017 Published: March 2015 Times Cited: 20 (影响因子：11.51)
[7]Author(s): R. N?tzel* and A. Urbanczyk
Title:Epitaxial self-alignment: A new route to hybrid active plasmonic nanostructures
Source: CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
Volume: 16 Issue: 2 Pages: 59-63
DOI: 10.1016/j.cossms.2011.10.002 Published: APR 2012 Times Cited: 2
(影响因子：7.509)
[8] Author(s): A. Richter, G. Behme, M. Süptitz, Ch. Lienau, T. Elsaesser, M. Ramsteiner, R. N?tzel, and K.H. Ploog
Title:Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy
Source: PHYSICAL REVIEW LETTERS Volume: 79 Issue: 11 Pages: 145-2148
DOI: 10. 1103/ PhysRevLett. 79. 2145 Published : SEP 1997 Times Cited: 120 (引用次数：120, 影响因子：7.805)
[9]Author(s): R. N?tzel
Title: InN/InGaN quantum dot electrochemical devices: new solutions for energy and health
Source:National Science Review Volume: 4 Issue:2 Pages:184-195
DOI: 10.1063/1.4909515 Published: MAR 2017 (影响因子：9.216)
[10]Author(s): P.E.D. Soto Rodriguez, V. Calderon Nash, P. Aseev, V.J. Gómez, P.Kumar, N.H. Alvi, A. Sánchez, R. Villalonga, J.M. Pingarrón, and R. N?tzel*
Title: Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)
Source: ELECTROCHEMISTRY COMMUNICATIONS Volume: 60 Pages: 158-162
DOI: 10.1016/j.elecom.2015.09.003 Published: NOV 2015 Times Cited: 2
(影响因子：4.607)
代表专利
[1]Halbleiterstruktur und Herstellungsverfahre/半导体结构及制造方法/ DE69429906T2/DE1994629906T
N?tzel Richard, Temmyo Jiro, Tamamura Toshiaki, Sugo Mitsuru, Kuramochi Eiichi, Nishiya Teruhiko /发明专利/2002.08.01/德国
[2]A method of fabricating a compositional semiconductor device/制造半导体器件的方法/EP0535293A1/EP19920100943
N?tzel Richard, Ledentsov N. Nikolai, Daeweritz Lutz, Ploog Klaus/发明专利/1993.04.07/欧洲专利局
[3]Method of fabricating a quantum dot structure on a (n11) substrate在（N11）基板上制造量子点结构的方法/US5543354A/US19940347778
Richard N?tzel, N. Jiro Temmyo, Toshiaki Tamamura, Mitsuru Sugo, Eiichi Kuramochi, Teruhiko Nishiya / 1996.08.06/美国
[4]Method of fabricating a compositional semiconductor device/制造半导体器件的方法/US5714765/ US19940329802
N?tzel Richard, Ledentsov N. Nikolai, Daeweritz Lutz, Ploog Klaus/ 1998.02.03/美国
代表奖项：
马克思普朗克协会的Otto Hahn奖章。
日本电话电报公司NTT光电子实验室奖章。
柏林-勃兰登堡科学院的学术奖章。