Xubing Lu, Ph. D, Professor
Guangdong Province Pearl River Scholar
陆旭兵 博士，二级教授，广东省珠江学者，博士/硕士导师
主要研究领域为电介质薄膜材料及其在新型非易失性信息存储、神经形态器件及集成无源电子器件等方向的应用。在传统Si基和薄膜晶体管场效应器件制备和表征、高介电常数材料/铁电薄膜材料制备及器件表征、微弱信号测试、CMOS集成电路工艺等方面积累了较为丰富的经验。与国际知名半导体公司有着较长时间的合作研究经历。如2000年－2004年间与Motorola半导体产品部数字基因实验室合作开展应用于下一代MOSFET的LaAlO3高介电常数材料工作；2006年－2008年在东京工业大学与日本富士通公司合作研究高可靠非易失性铁电场效应晶体管存储器件。在Adv. Mater, Adv. Electron. Mater, Appl. Phys. Lett等本领域权威专业国际期刊上发表SCI文章100余篇，获得授权美国专利一项，欧洲Wiley–VCH出版社关于高介电常数材料的英文著作一章。现任校学术委员会委员、华南先进光电子研究院副院长，Nature Electronics、Nature Communications等杂志审稿人，中国材料与试验团体标准委员会电子材料领域委员会委员，中国仪器仪表学会功能材料分会电子元器件关键材料与技术专业委员会资深常务委员。
Contact Information(联系方式)
Email: luxubing@m.scnu.edu.cn
通信地址：广州大学城华南师范大学华南先进光电子研究院理五栋512室510006
Mail Address: Rm 512, Building 5, South China Normal University at Guangzhou Higher Educational Mega Center, Guangzhou 510006, China
教育经历：
1999年-2002年，南京大学，博士
1996年-1999年，中南大学，硕士
1992年-1996年，中南大学，学士
Education:
1999-2002, Nanjing University, Ph. D
1996-1999, Central South University, Master
1992-1996, Central South University, Bachelor
工作经历：
2010/09-至今， 华南师范大学, 教授
2012/02-2013/01，德国马普微结构物理所，洪堡研究员
2010.04-2010.11，德国马普微结构物理所，洪堡研究员
2009年-2010年，日本国立材料研究所(NIMS)，博士后
2008年-2009年，日本产业技术综合研究所(AIST)，纳电子器件部，博士后
2006年-2008年，日本东京工业大学，电子及应用物理系，JSPS研究员
2004年-2005年，香港理工大学，应用物理系，Research Associate
2002年-2004年，北京大学，信息科学技术学院微电子研究院，博士后
Work Experience:
2010.09-now Professor
South China Normal University, Guangzhou, China
2012.02-2013.01 Alexander von Humboldt experienced researcher
Max Planck Institute of Microstructure Physics, Germany
2010.04-2010.11 Alexander von Humboldt experienced researcher
Max Planck Institute of Microstructure Physics, Germany
2009-2010 Post-doctoral Researcher
National Institute for Materials Science(NIMS), Japan
2008-2009 Post-doctoral Researcher
National Institute of Advanced Industrial Science and Technology，Japan
2006-2008 Japan Society for the Promotion of Science (JSPS) research fellow
Tokyo Institute of Technology, Japan
2004-2005 Research Associate
The Hong Kong Polytech University, Hong Kong, China
2002-2004 Post-doctoral Researcher
Peking University, Beijing, China
研究方向：
课题组目前以高介电常数(κ)材料为核心研究对象，探索其介电、铁电和压电特性，在如下几个器件应用方向展开研究：
1、 高速、低功耗信息存器件。具体包括：(1) 高介电常数HfO2基薄膜的的铁电性起源、调控及其相关机理；(2) 基于HfO2铁电薄膜的非易失性存储器件(铁电场效应晶体管、铁电阻变器件)；(3) 基于高κ材料的电荷俘获型存储器件。
2、 高性能薄膜晶体管。基于高κ介电薄膜的氧化物/有机薄膜晶体管制备、表征及其在显示驱动、非易失存储、光电传感等方向的应用研究。
3、 人工神经形态器件。采用高κ薄膜的电荷俘获型存储器件、铁电阻变器件、铁电场效应晶体管等结构的人工神经形态器件的制备、表征及相关机理研究。
4、 集成无源电子器件。采用ALD、PLD等方法制备各类高κ介电薄膜如AlN、Al2O3、HfAlO等，研究其在高性能薄膜电容器中的应用。
Research topics:
We focus on the fabrication, characterization, and device applications of various high dielectric constant (κ) materials. Based on their dielectric, ferroelectric, and piezoelectric properties, the following device application directions are carried out:
1. High speed, low power nonvolatile memory devices. (1) The origin, regulation and related mechanism of ferroelectricity in high-κ HfO2 thin films; (2) Nonvolatile memory devices based on HfO2 ferroelectric thin film (ferroelectric field effect transistor, ferroelectric resistive switching memory device); (3) Charge trapping memory device based on high-κ material.
2. High performance thin film transistor. Preparation and characterization of oxide / organic thin film transistors based on high-κ dielectric thin films and their applications in display driving, nonvolatile information storage, photoelectric sensing and so on.
3. Artificial neuromorphic devices. Preparation, characterization and related mechanism of neuromorphic devices, including high-κ dielectric film adopted charge trap memory devices, ferroelectric resistive switching devices, and ferroelectric field effect transistors.
4. Integrated passive devices. Various high-κ dielectric films such as AlN, Al2O3 and HfAlO were prepared by ALD and PLD, and their applications in high-performance thin film capacitors were studied
所获主要奖励和荣誉
2016年 广东省珠江学者特聘教授
2009年 洪堡学者奖学金(For experienced researcher)德国洪堡基金会
2008年 丸文研究促成奖丸文株式会社(日本)
2006年 日本文部省学术振兴会奖学金(JSPS fellowship)
Awards and Honors
2016 Guangdong Province Pearl River Scholar
2009 Alexander von Humboldt research fellowship for experienced researcher
2008 Marubun research promotion award
2006 The Japan Society for Promotion of Science (JSPS fellowship)
负责代表性科研项目(Projects)
1、国家自然科学基金原创探索重点项目课题：铪基铁电/反铁电序构异质结的信息存储及存算一体原型器件，项目批准号：52250281，执行时间：2023.01-2025.12。项目第二申请人，华南师范大学PI。
2、国家自然科学基金面上项目：金属-HfO2基铁电薄膜-绝缘层-半导体(MFIS)存储单元结构中的界面电荷注入效应研究，项目批准号：62174059，执行时间：2022.01-2025.12。
3、国家自然科学基金面上项目：超低漏电高介电常数薄膜的液相法低温制备及其与有机半导体的界面修饰研究，项目批准号：51872099，执行时间：2019.01-2022.12。
4、广东省国际科技合作项目：柔性电子用可印刷高介电常数薄膜研究，项目批准号：2021A0505030064， 执行时间：2021.01-2022.12。
5、2016年度广东省前沿与关键技术创新项目课题：“可印刷高介电常数绝缘显示材料关键技术研究”，项目批准号：2016B090907001，执行时间：2016.01-2018.12。项目第二申请人，华南师范大学PI。
6、国家自然科学基金面上项目：“外延BaTiO3薄膜的导电性能调控及电荷输运机制研究”，项目批准号：51472093，执行时间：2015.01-2018.12。
7、国家自然科学基金面上项目：“基于高K浮栅的有机非易失性存储器件研究”，批准号：61271127，执行时间：2013.01-2016.12。
8、国家自然科学基金重点项目课题：“金属导电性与铁电极化共存的新型功能材料设计与制备”，项目批准号：51431006，执行时间：2015.01-2019.12。项目第二申请人，华南师范大学PI。
9、企业委托项目：“高介电常数薄膜电容器开发”，执行时间：2018.12-2022.11。
近年代表性论文(Refereed Journal Articles from 2011-present)
1 “Ferroelectric polarization and conductance filament coupling for large window and high-reliability resistive memory and energy-efficient synaptic devices”
Ming Li, Zhengmiao Zou, Zihao Xu, Junfeng Zheng, Yushan Li, Ruiqiang Tao*, Zhen Fan , Guofu Zhou, Xubing Lu*, Junming Liu
Journal of Materials Science & Technology, 198, 36–43 (2024)
2 “Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories”
Nannan Liu, Chunlai Luo, Hongdi Wu, Yecheng Ding, Xubing Lu*, Zhibo Yan, Jun-Ming Liu, and Guoliang Yuan*
Applied Physics Letters, 124, 192905 (2024)
3 “Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High-k Oxide Composite Dielectric”
Yushan Li, Wei Cai, Ruiqiang Tao*, Wentao Shuai, Jingjing Rao, Cheng Chang, Xubing Lu*, and Honglong Ning*
ACS Applied Materials & Interfaces, 16(15), 19271-19282 (2024)
4 “Microfluidic shearing regulated in spin-coated dielectrics for ultra-low voltage and high-performance synaptic transistors”
Yushan Li, Lixin Jing, Dandan Qu, Zihao Xu, Ruiqiang Tao*, Zhen Fan, Guofu Zhou, Xubing Lu*, and Junming Liu
Applied Physics Letters, 124, 073302 (2024)
5 “High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-Coated Hafnium Oxide Gate Dielectrics”
Haonan Liu, Lixin Jing, Kexin He, Dandan Qu, Yushan Li, Takeo Minari, Ruiqiang Tao*, Xubing Lu*, and Junming Liu
IEEE Electron Device Letters, 44(9), 1508-1511 (2023)
6 “Superior and ultrafast energy storage performance of relaxorantiferroelectric HfO2-based supercapacitors”
Wentao Shuai, Ji-Yan Dai*, Zihao Xu, Guo Tian, Chunlai Luo, Ming Li, Ruiqiang Tao, Zhen Fan, Deyang Chen, Guofu Zhou, Xubing Lu*, and Junming Liu
Energy Storage Materials, 62, 102931 (2023)
7 “Ferroelectric Hf0.5Zr0.5O2-gated synaptic transistors with large conductance dynamic range and multilevel states”
Chunlai Luo, Yan Zhang, Wentao Shuai, Kexin He, Ming Li, Ruiqiang Tao*, Deyang Chen, Zhen Fan, Bin Zhang, Xiaoyuan Zhou, Ji-Yan Dai, Guofu Zhou, Xubing Lu* and Jun-Ming Liu
Science China-Materials, 66(6), 2372-2382 (2023)
8 “Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms”
Min Guo, Hai Ou, Dongyu Xie, Qiaoji Zhu, Mengye Wang, Lingyan Liang, Fengjuan Liu,Ce Ning, Hongtao Cao, Guangcai Yuan, Xubing Lu*, and Chuan Liu*
Advanced Electronic Materials, 9, 2201184 (2023)
9 “Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer”
Yan Zhang, Dao Wang, Jiali Wang, Chunlai Luo, Ming Li, Yushan Li, Ruiqiang Tao, Deyang Chen, Zhen Fan, Ji-Yan Dai, Guofu Zhou, Xubing Lu* and JunMing Liu
Science China Materials, 66(1): 219–232 (2023)
10 “Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update”
Cheng Chang, Yushan Li, Yan Zhang, Wentao Shuai, Haonan Liu, Ting Huang, Zhen Fan, Takeo Minari, Guofu Zhou, Ruiqiang Tao*, Xubing Lu*, and Junming Liu
IEEE Electron Device Letters, 43(9), 1467-1470 (2022)
11 “Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High-k Laminates”
Yushan Li, Ruiqiang Tao*, Beijing Zhang, Wentao Shuai, Yue Zhou, Cheng Chang, Ting Huang, Zihao Xu, Zhen Fan, Guofu Zhou, Xubing Lu*, and Junming Liu
Advanced Electronic Materials, 8, 2200137 (2022)
12 “Controllable Coercive Field of Ferroelectric HfO2 Via UV-Ozone Surface Modification”
Yan Zhang, Dao Wang, Chunlai Luo, Jiayun Cheng, Siying Huo, Beijing Zhang, Ruiqiang Tao, Deyang Chen, Zhen Fan, Ji-Yan Dai, Xubing Lu*, and J.-M. Liu
IEEE Transactions on Electron Devices, 69(6), 3094-3099 (2022)
13 “Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode”
Dao Wang, Yan Zhang, Jiali Wang, Chunlai Luo, Ming Li, Wentao Shuai, Ruiqiang Tao, Zhen Fan, Deyang Chen, Min Zeng, Jiyan Dai*, Xubing Lu*, and J.-M. Liu
Journal of Materials Science & Technology, 104, 1-7 (2022)
14 “Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf0.5Zr0.5O2 thin films”
Zhengmiao Zou, Guo Tian, Dao Wang, Yan Zhang, Jiali Wang, Yushan Li, Ruiqiang Tao, Zhen Fan, Deyang Chen, Min Zeng, Xingsen Gao, Ji-Yan Dai , Xubing Lu and J-M Liu
Nanotechnology, 32(33) (2021)
15 “Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films”
Yan Zhang, Zhen Fan*, Dao Wang, Jiali Wang, Zhengmiao Zou, Yushan Li, Qiang Li, Ruiqiang Tao,Deyang Chen, Min Zeng, Xingsen Gao, Jiyan Dai, Guofu Zhou, Xubing Lu* and JunMing Liu
ACS Applied Materials & Interfaces 12, 40510?40517(2020)
16 “A flexible and high temperature tolerant strain sensor of La0.7Sr0.3MnO3/Mica”
Min Guo, Cheng Yang, Dong Gao, Qiang Li, Aihua Zhang, Jiajun Feng, Hui Yang, Ruiqiang Tao, Zhen Fan, Min Zeng, Guofu Zhou, Xubing Lu?, and J. -M. Liu
Journal of Materials Science & Technology, 44, 42-47 (2020)
17 “From unipolar, worm-type to ambipolar, bistable organic electret memory device by controlling minority lateral transport”
Waner He, Wenchao Xu, Huixin He, Xiaosai Jing, Chuan Liu*, Jiajun Feng, Chunlai Luo, Zhen Fan, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu?, and Junming Liu
Advanced Electronic Materials, 6, 1901320 (2020)
18 “Hall voltage reversal and structural phase transition in VO2 thin films”
Jiajun Feng, Chuanfu Li, Chunlai Luo, Hui Yang, Aihua. Zhang, Qiang. Li, Min. Guo, Dong. Gao, Zhen. Fan, Deyang Chen, Minghui. Qin, Min. Zeng, Xingsen. Gao, Yuan. Lin, Xubing Lu?, and J. -M. Liu
Applied Physics Letters, 116, 082106 (2020)
19 “Oxygen incorporated solution-processed high-k La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films”
Longsen Yan, Waner He, Xiaoci Liang, Chuan Liu*, Xihong Lu, Chunlai Luo, Aihua Zhang, Ruiqiang Tao, Zhen Fan, Min Zeng, Honglong Ning, Guofu Zhou, Xubing Lu?, and Junming Liu
Journal of Materials Chemistry C, 8, 5163(2020)
20 “Enhanced ferroelectric properties and insulator-metal transition-induced shift of polarization-voltage hysteresis loop in VOx?capped Hf0.5Zr0.5O2 thin films”
Yan Zhang, Zhen Fan*, Dao Wang, Jiali Wang, Zhengmiao Zou, Yushan Li, Qiang Li, Ruiqiang Tao, Deyang Chen, Min Zeng, Xingsen Gao, Jiyan Dai, Guofu Zhou, Xubing Lu?, and Jun-Ming Liu
ACS Applied Materials & Interfaces, 12, 40510-40517(2020)
21 “All-inorganic flexible Ba0.67Sr0.33TiO3 thin films with excellent dielectric properties over a wide range of frequencies”
Dong Gao, Zhengwei Tan, Zhen Fan?, Min Guo, Zhipeng Hou, Deyang Chen, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu?, and Jun-Ming Liu
ACS Applied Materials & Interfaces, 11, 27088-27097 (2019)
22 “A flexible strain sensor of Ba(Ti, Nb)O3/Mica with a broad working temperature range”
Cheng Yang, Min Guo, Dong Gao, Waner He, Jiajun Feng, Aihua Zhang, Zhen Fan, Deyang Chen, Min Zeng, Sujuan Wu, Jinwei Gao, Chuanfei Guo*, Guofu Zhou, Xubing Lu?, and Junming Liu
Advanced Materials Technologies, 4, 1900578 (2019)
23 “Oxygen vacancy mediated conductivity and charge transport properties of epitaxial Ba0.6La0.4TiO3-d thin films”
Qiang Li, Aihua Zhang, Dong Gao, Min Guo, Jiajun Feng, Min Zeng, Zhen Fan, Deyang Chen, Xingsen Gao, Guofu Zhou, Xubing Lu?,and J. -M. Liu
Applied Physics Letters, 114, 202902 (2019)
24 “A flexible memory with low-voltage and high-operation speed using an Al2O3/poly (a-methylstyrene) gate stack on a muscovite substrate”
Huixin He, Waner He, Jiaying Mai, Jiali Wang, Zhengmiao Zou, Dao Wang, Jiajun Feng, Aihua Zhang, Zhen Fan, Sujuan Wu, Min Zeng, Jinwei Gao, Guofu Zhou, Xubing Lu?, and J. -M. Liu
Journal of Materials Chemistry C, 7, 1913 (2019)
25 “Excellent ferroelectric properties of Hf0.5Zr0.5O2 thin films induced by Al2O3 dielectric Layer”
Jiali Wang, Dao Wang, Qiang Li, Aihua Zhang, Dong Gao, Min Guo, Jiajun Feng, Zhen Fan,
Deyang Chen, Minghui Qin, Min Zeng, Xingsen Gao, Guofu Zhou, Xubing Lu?, and J. -M. Liu
IEEE Electron Device Letters, 40, 1937-1940 (2019)
26 “Room-temperature fabrication of high-quality lanthanum oxide high-κ dielectric films by a solution process for low-power soft llectronics”
Kai Zhao, Yanfen Gong, Longsen Yan, Waner He, Dao Wang, Jiali Wang, Zhengmiao Zou, Chunlai Luo, Aihua Zhang, Zhen Fan, Jinwei Gao, Honglong Ning, Guofu Zhou, Xubing Lu?, and Junming Liu
Advanced Electronic Materials, 5, 1900427 (2019)
27 “Direct evidence for the coexistence of nanoscale high-conduction and low-conduction phases in VO2 films”
Jiajun Feng, Cheng Yang, Aihua Zhang, Qiang Li, Zhen Fan, Minghui Qin, Min Zeng, Xingsen Gao, Yuan Lin, Guofu Zhou, Xubing Lu?, and J. -M. Liu*
Applied Physics Letters, 113, 173104 (2018)
28 “Room temperature fabrication of high quality ZrO2 dielectric films for high performance flexible organic transistor applications”
Yanfen Gong, Kai Zhao, Longsen Yan, Weiyao Wei, Cheng Yang, Honglong Ning, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu?, and J.-M. Liu*
IEEE Electron Device Letters, 39, 280-283 (2018)
29 “High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers”
Wenchao Xu, Huixin He, Xiaosai Jing, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xingsen Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu*
Applied Physics Letters, 111, 063302 (2017)
30 “Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping”
Xiaosai Jing, Wenchao Xu, Cheng Yang, Jiajun Feng, Aihua Zhang, Yanping Zeng, Minghui
Qin, Min Zeng, Zhen Fan, Jinwei Gao, Xingsen Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu*
Applied Physics Letters, 110(18), 182903 (2017)
31 “Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors”
Wenqiang He, Wenchao Xu, Qiang Peng, Chuan Liu, Guofu Zhou, Sujuan Wu, Min Zeng, Zhang Zhang, Jinwei Gao, Xingsen Gao, Xubing Lu*, and J. -M. Liu*
Journal of Physical Chemistry C, 120 (18), 9949-9957(2016)
32 “Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies”
Ming Li, Jian Zhou, Xiaosai Jing, Min Zeng, Sujuan Wu, Jinwei Gao, Zhang Zhang, Xingsen Gao, Xubing Lu*, J. -M. Liu, and Marin Alexe*
Advanced Electronic Materials, 1(6), 1500069(2015)
33 “Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications”
Yang Zhang, Yayun Shao, Xubing Lu*, Min Zeng, Zhang Zhang, Xingsen Gao, Xuejin Zhang, J. -M. Liu*, and Jiyan Dai
Applied Physics Letters, 105(17), 172902(2014)
34 “Temperature dependence of frequency response characteristics in organic field-effect transistors”
Xubing Lu, Takeo Minari*, Chuan Liu, Akichika Kumatani, J.-M. Liu, and Kazuhito Tsukagoshi*
Applied Physics Letters, 100(18), 183308(2012)
35 “Effect of air exposure on metal/organic interface in organic field effect transistors”
Xubing Lu, Takeo Minari, Akichika Kumatani, Chuan Liu, and Kazuhito Tsukagoshi*
Applied Physics Letters. 98, 243301 (2011)
著作
X. B. Lu, High-k Gate Dielectrics for CMOS Technology, Chapter 15: High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications, Weinheim (Germany), ISBN: 978-3-527-33032-4. Wiley- VCH Verlag GmbH & Co. 2012.08: 473-499.
授权发明专利
1 J. Y. Dai, X. B. Lu, P. F. Lee, Process and apparatus for fabricating nano-floating gate memories and memory made thereby, 2009.09, US Patent No. 7585721.
2 “一种溶液法印刷制备薄膜晶体管的方法”，陆旭兵、靖丽欣、陶瑞强、李育珊、刘浩楠。专利号：ZL 202310087912.6
3 “一种氧化铪薄膜晶体管的制备方法”，陆旭兵、刘浩楠、靖丽欣、霍思颖。专利号：ZL 202310083285.9
4 “一种氧化铝薄膜电容器的制备方法及其制得的电容器”，陆旭兵、陈晓丹、张蓓菁、周月。专利号：ZL 202210581357.8
5 “一种具有宽带性能的芯片电容器”，陆旭兵、刘福扩。专利号：ZL 202210113856.4
6 “一种基于IPD技术的超宽带带通滤波器”，陆旭兵、刘福扩。专利号：ZL 202210113844.1
7 “一种氧化铪基铁电薄膜电容器及其制备方法”，陆旭兵、张岩、帅文韬。专利号：ZL 202111600634.7
8 “一种基于高K材料的有机非易失性的存储器件及其制备方法”， 陆旭兵、许文超、刘俊明。专利号：ZL 201610070604.2
9 “一种用于柔性低压驱动有机薄膜晶体管的高介电栅介质材料的制备方法”, 陆旭兵、严龙森、龚岩芬、曾敏、刘俊明。专利号：ZL 201610527964.0
10 “一种用于制备低漏电高介电绝缘材料的前驱体溶液的制备方法及其应用”，陆旭兵，严龙森，刘俊明。专利号：ZL 201710092981.0
11 “一种基于PMMA掺杂小分子的高迁移率晶体管及其制备方法”，陆旭兵，韦蔚尧，刘俊明。专利号：ZL 201710372261.X
12 “一种适用于柔性OTFT集成电路的金属互连结构及其制作方法”, 陆旭兵，赵凯，刘俊明。专利号：ZL 201710713407.2