陆旭兵

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Xubing Lu, Ph. D, Professor

Guangdong Province Pearl River Scholar

陆旭兵 博士,二级教授,广东省珠江学者,博士/硕士导师

目前研究主要领域为介电薄膜材料(主要为高介电常数薄膜和铁电薄膜)及其器件集成与应用。在传统Si基和薄膜晶体管场效应器件制备和表征、高介电常数材料/铁电薄膜材料制备及器件表征、微弱信号测试、CMOS集成电路工艺等方面积累了较为丰富的经验。与国际知名半导体公司有着较长时间的合作研究经历。如2000-2004年间与Motorola半导体产品部数字基因实验室合作开展应用于下一代MOSFETLaAlO3高介电常数材料工作;2006-2008年在东京工业大学与日本富士通公司合作研究高可靠非易失性铁电场效应晶体管存储器件。在Adv. Mater, Adv. Electron. Mater, Appl. Phys. Lett等本领域权威专业国际期刊上发表SCI文章100余篇,获得授权美国专利一项,欧洲Wiley–VCH出版社关于高介电常数材料的英文著作一章。现任校学术委员会委员、华南先进光电子研究院副院长,Nature Electronics、Nature Communications等杂志审稿人,中国材料与试验团体标准委员会电子材料领域委员会委员,中国仪器仪表学会功能材料分会电子元器件关键材料与技术专业委员会资深常务委员。


Contact Information (联系方式)

Email: luxubing@m.scnu.edu.cn; luxubingmail@163.com

通信地址:广州大学城华南师范大学华南先进光电子研究院理五栋512510006

      Mail Address: Rm 512, Building 5, South China Normal University at Guangzhou

                              Higher Educational Mega Center, Guangzhou 510006, China


教育经历:

1999-2002年,南京大学,博

1996-1999年,中南大学,硕士

1992-1996年,中南大学,学士

Education:

1999-2002, Nanjing University, Ph. D

1996-1999, Central South University, Master

1992-1996, Central South University, Bachelor

工作经历:

2010.09-至今    华南师范大学, 教授

2012.02-2013.01   德国马普微结构物理所洪堡研究员

2010.04-2010.11   德国马普微结构物理所洪堡研究员

2009-2010  日本国立材料研究所(NIMS)博士后

2008-2009  日本产业技术综合研究所(AIST)纳电子器件部,博士后

2006-2008  日本东京工业大学,电子及应用物理系JSPS研究员

2004-2005  香港理工大学,应用物理系,Research Associate

2002-2004  北京大学信息科学技术学院微电子研究院博士后

Work Experience:

2010.09-now          Professor

                               South China Normal University, Guangzhou, China

2012.02-2013.01    Alexander von Humboldt experienced researcher

                               Max Planck Institute of Microstructure Physics, Germany

2010.04-2010.11    Alexander von Humboldt experienced researcher

                               Max Planck Institute of Microstructure Physics, Germany

2009-2010              Post-doctoral Researcher

                               National Institute for Materials Science(NIMS), Japan

2008-2009              Post-doctoral Researcher

                               National Institute of Advanced Industrial Science and Technology, Japan

2006-2008             Japan Society for the Promotion of Science (JSPS) research fellow

                              Tokyo Institute of Technology, Japan

2004-2005             Research Associate

                              The Hong Kong Polytech University, Hong Kong, China

2002-2004             Post-doctoral Researcher

                              Peking University, Beijing, China

研究方向:

    课题组目前以高介电常数(κ)材料为核心研究对象,探索其介电、铁电和压电特性,在如下几个器件应用方向展开研究:

1、 高速、低功耗信息存器件。具体包括:(1) 高介电常数HfO2基薄膜的的铁电性起源、调控及其相关机理;(2) 基于HfO2铁电薄膜的非易失性存储器件(铁电场效应晶体管、铁电阻变器件)(3)基于高κ材料的电荷俘获型存储器件。

2、 高性能薄膜晶体管。基于高κ介电薄膜的氧化物/有机薄膜晶体管制备、表征及其在显示驱动、非易失存储、光电传感等方向的应用研究。

3、 人工突触器件。采用高κ薄膜的电荷俘获型存储器件、铁电阻变器件、铁电场效应晶体管等结构的人工突触器件的制备、表征及相关机理研究。

4、集成无源电子器件。采用ALD、PLD等方法制备各类高κ介电薄膜如AlNAl2O3HfAlO等,研究其在高性能薄膜电容器中的应用。

Research topics:

We focus on the fabrication, characterization, and device applications of various high dielectric constant (κ) materials. Based on their dielectric, ferroelectric, and piezoelectric properties, the following device application directions are carried out:

1. High speed, low power nonvolatile memory devices. (1) The origin, regulation and related mechanism of ferroelectricity in high-κ HfO2 thin films; (2) Nonvolatile memory devices based on HfO2 ferroelectric thin film (ferroelectric field effect transistor, ferroelectric resistive switching memory device); (3) Charge trapping memory device based on high-κ material.

2. High performance thin film transistor. Preparation and characterization of oxide / organic thin film transistors based on high-κ dielectric thin films and their applications in display driving, nonvolatile information storage, photoelectric sensing and so on.

3. Artificial synaptic devices. Preparation, characterization and related mechanism of artificial synaptic devices, including high-κ dielectric film adopted charge trap memory devices, ferroelectric resistive switching devices, and ferroelectric field effect transistors.

4. Integrated passive devices. Various high-κ dielectric films such as AlN, Al2O3 and HfAlO were prepared by ALD and PLD, and their applications in high-performance thin film capacitors were studied.

所获主要奖励和荣誉

2016年 广东省珠江学者特聘教授

2009年 洪堡学者奖学金(For experienced researcher)德国洪堡基金会

2008年 丸文研究促成奖丸文株式会社(日本

2006年 日本文部省学术振兴会奖学金(JSPS fellowship) 

Awards and Honors

2016  Guangdong Province Pearl River Scholar

2009  Alexander von Humboldt research fellowship for experienced researcher

2008  Marubun research promotion award

2006  The Japan Society for Promotion of Science (JSPS fellowship)

负责代表性科研项目(Projects)

1、国家自然科学基金面上项目:金属-HfO2基铁电薄膜-绝缘层-半导体(MFIS)存储单元结构中的界面电荷注入效应研究,项目批准号:62174059,批准金额: 60.0万元,执行时间:2022.01-2025.12

2、国家自然科学基金面上项目:超低漏电高介电常数薄膜的液相法低温制备及其与有机半导体的界面修饰研究,项目批准号:51872099,批准金额: 60.0万元,执行期间:2019.01-2022.12

3、广东省国际科技合作项目:柔性电子用可印刷高介电常数薄膜研究,项目批准号:2021A0505030064,批准金额: 50.0万元,执行期间:2021.01-2022.12

4、2016年度广东省前沿与关键技术创新项目:“可印刷高介电常数绝缘显示材料关键技术研究”,项目批准号:2016B090907001,负责金额:150.0万元,执行时间:2016.01-2018.12。第二申请人,华南师范大学负责人。

5、国家自然科学基金面上项目:“外延BaTiO3薄膜的导电性能调控及电荷输运机制研究”,项目批准号:51472093,批准金额:83.0万元,执行时间:2015.01-2018.12

6、国家自然科学基金面上项目:“基于高κ浮栅的有机非易失性存储器件研究”,批准号: 61271127,批准金额:88.0万元,执行时间:2013.01-2016.12

7、国家自然科学基金重点项目子课题:“金属导电性与铁电极化共存的新型功能材料设计与制备”,项目批准号:51431006,执行时间:2015.01-2019.12,项目第二申请人,华南师范大学项目负责人,华师经费:150.0万元。

8、企业委托项目:“高介电常数薄膜电容器开发”,合同金额:60.0万元,执行时间:2018.12-2022.11。


近年代表性论文(Refereed Journal Articles fom 2011-present)

       1 “A flexible and high temperature tolerant strain sensor of La0.7Sr0.3MnO3/Mica” 

Min Guo, Cheng Yang, Dong Gao, Qiang Li, Aihua Zhang, Jiajun Feng, Hui Yang, Ruiqiang Tao, Zhen Fan, Min Zeng, Guofu Zhou, Xubing Lu*, and J. -M. Liu

Journal of Materials Science & Technology, 44, 42-47 (2020)


2 “From unipolar, worm-type to ambipolar, bistable organic electret memory device by controlling minority lateral transport”

Waner He, Wenchao Xu, Huixin He, Xiaosai Jing, Chuan Liu*, Jiajun Feng, Chunlai Luo, Zhen Fan, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu*and Junming Liu

Advanced Electronic Materials, 6, 1901320 (2020)

 

3 “Hall voltage reversal and structural phase transition in VO2 thin films”

Jiajun Feng, Chuanfu Li, Chunlai Luo, Hui Yang, Aihua. Zhang, Qiang. Li, Min. Guo, Dong. Gao, Zhen. Fan, Deyang Chen, Minghui. Qin, Min. Zeng, Xingsen. Gao, Yuan. Lin, Xubing Lu*and J. -M. Liu

Applied Physics Letters, 116, 082106 (2020)

 

4 “Oxygen incorporated solution-processed high-k La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films”

Longsen Yan, Waner He, Xiaoci Liang, Chuan Liu*, Xihong Lu, Chunlai Luo, Aihua Zhang, Ruiqiang Tao, Zhen Fan, Min Zeng, Honglong Ning, Guofu Zhou, Xubing Lu*and Junming Liu

Journal of Materials Chemistry C, 8, 5163(2020)

 

5 “Enhanced ferroelectric properties and insulator-metal transition-induced shift of polarization-voltage hysteresis loop in VOx capped Hf0.5Zr0.5O2 thin films”

Yan Zhang, Zhen Fan*, Dao Wang, Jiali Wang, Zhengmiao Zou, Yushan Li, Qiang Li, Ruiqiang Tao, Deyang Chen, Min Zeng, Xingsen Gao, Jiyan Dai, Guofu Zhou, Xubing Lu*, and Jun-Ming Liu

ACS Applied Materials & Interfaces, 12, 40510-40517(2020)

 

6 “All-inorganic flexible Ba0.67Sr0.33TiO3 thin films with excellent dielectric properties over a wide range of frequencies”

Dong Gao, Zhengwei Tan, Zhen Fan*, Min Guo, Zhipeng Hou, Deyang Chen, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu*and Jun-Ming Liu

ACS Applied Materials & Interfaces, 11, 27088-27097 (2019)

 

7 “A flexible strain sensor of Ba(Ti, Nb)O3/Mica with a broad working temperature range”

Cheng Yang, Min Guo, Dong Gao, Waner He, Jiajun Feng, Aihua Zhang, Zhen Fan, Deyang Chen, Min Zeng, Sujuan Wu, Jinwei Gao, Chuanfei Guo*, Guofu Zhou, Xubing Lu*and Junming Liu

Advanced Materials Technologies, 4, 1900578 (2019)

 

8 “Oxygen vacancy mediated conductivity and charge transport properties of epitaxial Ba0.6La0.4TiO3-d thin films”

Qiang Li, Aihua Zhang, Dong Gao, Min Guo, Jiajun Feng, Min Zeng, Zhen Fan, Deyang Chen, Xingsen Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu

Applied Physics Letters, 114, 202902 (2019)

 

9 “A flexible memory with low-voltage and high-operation speed using an Al2O3/poly (a-methylstyrene) gate stack on a muscovite substrate”

Huixin He, Waner He, Jiaying Mai, Jiali Wang, Zhengmiao Zou, Dao Wang, Jiajun Feng, Aihua Zhang, Zhen Fan, Sujuan Wu, Min Zeng, Jinwei Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu

Journal of Materials Chemistry C, 7, 1913 (2019)

 

10 “Excellent ferroelectric properties of Hf0.5Zr0.5O2 thin films induced by Al2O3 dielectric Layer”

Jiali Wang, Dao Wang, Qiang Li, Aihua Zhang, Dong Gao, Min Guo, Jiajun Feng, Zhen Fan,

Deyang Chen, Minghui Qin, Min Zeng, Xingsen Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu

IEEE Electron Device Letters, 40, 1937-1940 (2019)

 

11 “Room-temperature fabrication of high-quality lanthanum oxide high-κ dielectric films by a solution process for low-power soft llectronics”

Kai Zhao, Yanfen Gong, Longsen Yan, Waner He, Dao Wang, Jiali Wang, Zhengmiao Zou, Chunlai Luo, Aihua Zhang, Zhen Fan, Jinwei Gao, Honglong Ning, Guofu Zhou, Xubing Lu*and Junming Liu

Advanced Electronic Materials, 5, 1900427 (2019)

 

12 “Direct evidence for the coexistence of nanoscale high-conduction and low-conduction phases in VO2 films”

Jiajun Feng, Cheng Yang, Aihua Zhang, Qiang Li, Zhen Fan, Minghui Qin, Min Zeng, Xingsen Gao, Yuan Lin, Guofu Zhou, Xubing Lu*and J. -M. Liu*

Applied Physics Letters, 113, 173104 (2018)

 

13 “Room temperature fabrication of high quality ZrO2 dielectric films for high performance flexible organic transistor applications”

Yanfen Gong, Kai Zhao, Longsen Yan, Weiyao Wei, Cheng Yang, Honglong Ning, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu*and J.-M. Liu*

IEEE Electron Device Letters, 39, 280-283 (2018)

 

14 “High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers”

Wenchao Xu, Huixin He, Xiaosai Jing, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xingsen Gao, Guofu Zhou, Xubing Lu*and J. -M. Liu*

Applied Physics Letters, 111, 063302 (2017)

 

15 “Tuning electrical conductivity, charge transport, and ferroelectricity in epitaxial BaTiO3 films by Nb-doping”

Xiaosai Jing, Wenchao Xu, Cheng Yang, Jiajun Feng, Aihua Zhang, Yanping Zeng, Minghui Qin, Min Zeng, Zhen Fan, Jinwei Gao, Xingsen Gao, Guofu Zhou, Xubing Lu*, and J. -M. Liu*

Applied Physics Letters, 110(18), 182903 (2017)


16 “Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors”
Wenqiang He, Wenchao Xu, Qiang Peng, Chuan Liu, Guofu Zhou, Sujuan Wu, Min Zeng, Zhang Zhang, Jinwei Gao, Xingsen Gao, Xubing Lu*and J. -M. Liu* 

Journal of Physical Chemistry C, 120 (18), 9949-9957(2016)

 

17 “Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies”
Ming Li, Jian Zhou, Xiaosai Jing, Min Zeng, Sujuan Wu, Jinwei Gao, Zhang Zhang, Xingsen Gao, Xubing Lu*, J. -M. Liu, and Marin Alexe* 

Advanced Electronic Materials, 1(6), 1500069(2015)

 

18 “Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications”
Yang Zhang, Yayun Shao, Xubing Lu*, Min Zeng, Zhang Zhang, Xingsen Gao, Xuejin Zhang, J. -M. Liu*, and Jiyan Dai
Applied Physics Letters, 105(17), 172902(2014)

 

19 “Temperature dependence of frequency response characteristics in organic field-effect transistors”

Xubing Lu, Takeo Minari*, Chuan Liu, Akichika Kumatani, J.-M. Liu, and Kazuhito Tsukagoshi*

Applied Physics Letters, 100(18), 183308(2012)

 

20 “Effect of air exposure on metal/organic interface in organic field effect transistors”
Xubing Lu, Takeo Minari, Akichika Kumatani, Chuan Liu, and Kazuhito Tsukagoshi*

Applied Physics Letters, 98, 243301 (2011)


著作

X. B. Lu, High-k Gate Dielectrics for CMOS Technology, Chapter 15: High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications, Weinheim (Germany), ISBN: 978-3-527-33032-4. Wiley-VCH Verlag GmbH & Co. 2012.08: 473-499.

 

授权发明专利

 

 J. Y. Dai, X. B. Lu, P. F. Lee, Process and apparatus for fabricating nano-floating gate memories and memory made thereby, 2009.09, US Patent No. 7585721.

“一种基于高κ材料的有机非易失性的存储器件及其制备方法”, 陆旭兵、许文超、刘俊明。专利号:ZL 201610070604.2。

“一种用于柔性低压驱动有机薄膜晶体管的高介电栅介质材料的制备方法”, 陆旭兵、严龙森、龚岩芬、曾敏、刘俊明。专利号:ZL 201610527964.0。

 “一种用于制备低漏电高介电绝缘材料的前驱体溶液的制备方法及其应用”,陆旭兵,严龙森,刘俊明。专利号:ZL 201710092981.0。

 “一种基于PMMA掺杂小分子的高迁移率晶体管及其制备方法”,陆旭兵,韦蔚尧,刘俊明。专利号:ZL 201710372261.X。

“一种适用于柔性OTFT集成电路的金属互连结构及其制作方法”, 陆旭兵,赵凯,刘俊明。专利号:ZL 201710713407.2。