祝煜

博士，特聘副研究员，青年英才引进人才。2018年于东北大学获工学学士学位。2023年于吉林大学获理学博士学位。2019年至2023年在中科院物理所联合培养。2024年加入华南师范大学华南先进光电子研究院。主要研究方向为拓扑磁性与隧道结相关理论计算，在Phys. Rev. B, Phys. Rev. Applied, Appl. Phys. Lett.等物理期刊发表SCI论文多篇。

E-mail：zhuy26@m.scnu.edu.cn

通讯地址：广州市番禺区大学城华南师范大学理五栋

教育经历

2014.10~2018.06：东北大学材料科学与工程学院，功能材料专业，工学学士

2018.09~2023.12：吉林大学物理学院，凝聚态物理专业，理学博士，导师：闫羽教授

2019.09~2023.02：中国科学院物理研究所M02组，联合培养，导师：韩秀峰研究员

工作经历

2024.04~今：华南师范大学，华南先进光电子研究院，特聘副研究员

研究领域

(1) 拓扑磁性：磁斯格明子体系中DM相互作用、磁交换作用、磁各向异性等磁学参数理论研究，包括应变体系、掺杂体系、范德华材料等

(2) 器件电子输运研究：基于非平衡格林函数方法探究新型自旋电子学器件中的电子运输机理，包括隧穿磁电阻效应、隧穿电致电阻效应等

代表性论文

[4] Y. Y. Wu, Y. X. Xu, P. Fu, Z. Zhang, C. C. Hu*, Y. Zhu*, C.Y. Xu

Interface strain modulation of magnetic anisotropy in van der Waals Fe₃GaTe₂

Surfaces and Interfaces 58, 105901 (2025)

[3] Y. Zhu, X. Y. Guo, B. Y. Chi, Y. Yan, and X. F. Han

Reconfigurable spin tunneling diode and giant tunneling magnetoresistance in a symmetric van der Waals double-barrier magnetic tunnel junction

Physical Review B 110, 054409 (2024)

[2] Y. Zhu, B. Y. Chi, L. N. Jiang, X. Y. Guo, Y. Yan*, and X. F. Han*

Large tunneling electroresistance, tunneling magnetoresistance, and regulatable negative differential conductance in a van der Waals antiferroelectric multiferroic tunnel junction

Physical Review Applied 20, 034010 (2023)

[1] Y. Zhu, X. Y. Guo, L. N. Jiang, Z. R. Yan, Y. Yan*, and X. F. Han*

Giant tunneling magnetoresistance in van der Waals magnetic tunnel junctions formed by interlayer antiferromagnetic bilayer CoBr₂

Physical Review B 103, 134437 (2021)

已发表其余论文

[11] X. Y. Guo; X. L Zhang; Y. Zhu; Y. H. Liu; X. F. Han; Y. Yan

Effective control of magnetism and transport properties of monolayer WV₂N₄ with two magnetic atomic layers and its van der Waals heterostructure

 Applied Physics Letters 125, 112402 (2024)

[10] B. Y. Chi, L. N. Jiang, Y. Zhu, G. Q. Yu, C. H. Wan, J. Zhang, and X. F. Han

Crystal-facet-oriented altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance

Physical Review. Applied, 21, 034038 (2024)

[9] T. Y. Ma, Y. Zhu, P. A. Dainone, T. X. Chen, X. Devaux, C. H. Wan, S. Migot, G. Lengaigne,         M. Vergnat, Y. Yan, X. F. Han*, and Y. Lu*

Large Sign Reversal of Tunneling Magnetoresistance in an Epitaxial Fe/MgAlO_x/Fe₄N Magnetic Tunnel Junction

ACS Applied Electronic Materials 5, 5954 (2023)

[8] B. Y. Chi, L. N. Jiang, Y. Zhu, L. L. Tao, and X. F. Han*

Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

Applied Physics Letters 123, 053501 (2023)

[7] X. Y. Guo, Y. Zhu, B. S. Yang, X. L. Zhang, X. F. Han, and Y. Yan*

Large tunneling magnetoresistance and low resistance-area product in CrSe₂/NiCl₂/CrSe₂ van der Waals magnetic tunnel junction

Applied Physics Letters 121, 042404 (2022)

[6] L. N. Jiang, Y-P. Wang, Y. Zhu, and X. F. Han*

Enhanced tunneling electroresistance effect by designing interfacial ferroelectric polarization in multiferroic tunnel junctions

Physical Review B, 105, 134410 (2022)

[5] X. Y. Guo, B. S. Yang, X. L. Zhang, Y. Zhu, X. F. Han, and Y. Yan*

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Physical Review B 104, 144423 (2021)

[4] F. F. Li, B. S. Yang, Y. Zhu, X. F. Han, and Y. Yan*

Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li_0.5CrI₃ and CrI₃

Applied Physics Letters 117, 022412 (2020)

[3] W. Z. Chen, L. N. Jiang, Z. R. Yan, Y. Zhu, C. H. Wan, and X. F. Han*

Origin of the large voltage-controlled magnetic anisotropy in a Cr/Fe/MgO junction with an ultrathin Fe layer: First-principles investigation

Physical Review B 101, 144434 (2020)

[2] F. F. Li, B. S. Yang, Y. Zhu, X. F. Han, and Y. Yan*

Four distinct resistive states in van der Waals full magnetic 1T-VSe₂/CrI₃/1T-VSe₂ tunnel junction

Applied Surface Science 505, 144648 (2020)

[1] X. Y. Guo, F. F. Li, Y. Zhu, Y. Yan*, and X. F. Han*

Interlayer coupling in intrinsically magnetic bilayer ScO₂ and NbN₂

Applied Physics Letters, 116, 082403 (2020)

招生简况

欢迎对物理和材料、理论计算感兴趣学生加入。

加分项：掌握QE、Siesta、ATK、Nanodcal、VASP等理论计算软件；具有固体物理、量子力学知识背景；了解自旋电子学相关知识；掌握Python、Matlab、Fortran等代码编写；熟悉Linux系统，可以撰写脚本程序；了解人工智能、神经网络、深度学习相关内容；熟练使用AI (GPT、Deepseek等)辅助工具；英语水平高等。

补充：课题组为国家优青团队，致力于新型磁性材料制备、多物理场调控、器件制备、理论计算和模拟等相关研究，课题组设备齐全，包括实验和理论研究，欢迎具有相关专业背景且对研究方向感兴趣的同学加入。

（更新时间：2025年4月11日）